Plasma Etching Machine Stracture

ICP ikwipmen i gat 4-pela hap: pre-vekim rum, etsing rum, ges saplai sistem na vekim sistem.

(1) Pre-vakuum rum

Wok bilong 'pre-vacuum chamber em long lukim olsem 'etching chamber' i stap long wanpela mak bilong 'vacuum', na ol samting ausait i no inap bagarapim (olsem das, wara steam), na rausim ol nogut ges long klinpela rum. Em i gat wanpela kava, wanpela 'manipulator', wanpela 'transmission mechanism', wanpela 'isolation door', na ol narapela samting.

(2) Etching chamber

'Etching chamber' em i as bilong ICP 'etching equipment'. Em i gat bikpela impak long 'etching rate', 'verticality' bilong 'etching', na 'roughness'. Ol bikpela samting bilong 'etching chamber' em: antap lektrod, ICP redio frikwensi yunit, RF redio frikwensi yunit, daunbilo lektrod sistem, tempereja kontrol sistem, na ol narapela.

(3) Ges saplai sistem

Ges saplai sistem em bilong givim ol kain kain 'etching gas' i go long 'etching chamber', na stretim gut 'gas flow rate' na 'flow' bilong en long 'pressure controller' (PC) na 'mass flow controller' (MFC). Ges saplai sistem i gat wanpela ges sos botol, wanpela paiplain bilong givim ges, wanpela kontrol sistem, wanpela miksing yunit, na ol narapela samting.

(4) Vacuum System
I gat tupela 'vacuum system', wanpela bilong 'pre-' 'vacuum chamber' na narapela bilong 'etching chamber'. Wanpela masin pam i save rausim 'pre-vacuum rum. Taim 'vacuum level' insait long 'pre-vacuum chamber' i kamap long mak we ol i makim, orait tasol ol i ken opim dua bilong 'isolation' long kisim 'wafer'. Wanpela 'mechanical pump' na 'molecular pump' i save givim 'vacuum' insait long 'etching chamber'. Ol ges we i kamap long 'reaction' insait long 'etching chamber' ol i save rausim tu long 'vacuum system'.