Plasma Etcher Principle

Inductively Coupled Plasma Etch (ICPE) em i samting we i kamap taim ol i bungim ol samting bilong kemikel na fisikel. As tingting bilong en em olsem, aninit long 'vacuum' na liklik presa, redio frikwensi we ICP RF pawa saplai i kamapim i save go aut long wanpela 'toroidal coupling coil'. Wanpela miks 'etching gas' long wanpela hap i pas wantaim wanpela 'glow discharge', na dispela i kamapim wanpela 'high-density plasma'. Aninit long strong bilong RF long bottom electrode, dispela plasma i save bomim pes bilong sabstret, na brukim ol kemikel bon bilong semikondakta materiel long eria bilong sabstret we i gat paten. Ol dispela samting i save pairap i save wok wantaim 'etching gas' na kamapim ol 'volatile' kompaun, we bihain ol i save bruk long sabstret olsem ol ges na ol i save kamaut long 'vacuum line'.